Infineon IRF1310NSPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;D2Pak;PD 160W;VGS +/-20V

Single N-Channel 100 V 0.036 Ohm 110 nC HEXFET® Power Mosfet - D2PAK

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 1.0uF 35volts *Derate Voltage/Temp

Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK

MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 3.8 W

Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

MOSFET, N, 100V, 42A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:42A; Resistance, Rds On:0.036ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:140A; Power Dissipation:160W; Power Dissipation on 1 Sq. PCB:3.8W; Power, Pd:160W; SMD Marking:IRF1310NS; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.95°C/W; Voltage, Vds:100V; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V