価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | AUIRF9540N | 4,491 | 19h | |||||||||
| RS (Formerly Allied Electronics) | AUIRF9540N | 0 | 25 | Bulk | 8h | |||||||
| Farnell | AUIRF9540N | 0 | 1 | 7h | ||||||||
| Microchip USA | AUIRF9540N | 108 | 300 | Bulk | 3d | |||||||
| Win Source | WS-AUIRF9540N | 20 | 30 | 20h |
代替部品
Price @ 1000
$ 1.657
$ 0.55
Stock
42,699
1,493,853
Authorized Distributors
3
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
-100 V
-100 V
Continuous Drain Current (ID)
23 A
23 A
Threshold Voltage
-2 V
-4 V
Rds On Max
-
117 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
140 W
94 W
Input Capacitance
1.3 nF
1.3 nF
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
説明
Infineon AUIRF9540Nの詳細は販売業者から提供されます。
Automotive Q101 -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB Package
Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET, P CH, 100V, 23A, TO-220AB; Transistor Polarity:P Channel; Continuous Drain Current Id:-23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)23 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance117 mΩ
Drain to Source Voltage (Vdss)-100 V
Fall Time51 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance117 mΩ
Package Quantity1000
Power Dissipation140 W
Rise Time67 ns
Threshold Voltage-2 V
Turn-Off Delay Time51 ns
Turn-On Delay Time15 ns
Dimensions
Height16.51 mm
Length10.66 mm
Width4.82 mm