Vishay IRF830APBF
技術仕様
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)5 A
Current5 A
Current Rating5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance620 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation74 W
Min Operating Temperature-55 °C
Nominal Vgs4.5 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation74 W
Rds On Max1.4 Ω
Recovery Time650 ns
Resistance1.4 Ω
Rise Time21 ns
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time21 ns
Turn-On Delay Time10 ns
Voltage500 V
Voltage Rating (DC)500 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm
Inventory History
3 month trend: -88.38%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
代替部品
Price @ 1000
$ 0.703
$ 2.29
Stock
1,187,271
260,086
Authorized Distributors
17
2
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220-3
Drain to Source Voltage (Vdss)
500 V
500 V
Continuous Drain Current (ID)
5 A
5 A
Threshold Voltage
4.5 V
-
Rds On Max
1.4 Ω
1.4 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
74 W
74 W
Input Capacitance
620 pF
620 pF
Engineering Resources
View Evaluation kits and Reference designs for Vishay IRF830APBF.
関連部品
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TRANS MOSFET N-CH 500V 5A 3PIN TO-220
onsemiFDP5N50
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB Rail
説明
Vishay IRF830APBFの詳細は販売業者から提供されます。
Single N-Channel 500 V 1.4 Ohms Flange Mount Power Mosfet - TO-220-3
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 500V 5A TO-220AB
MOSFET N-CH 500V 5A TO-220AB | Siliconix / Vishay IRF830APBF
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 500V, 5A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Msl:- Rohs Compliant: Yes |Vishay IRF830APBF.
MOSFET, N, 500V, 5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.7°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:74W; Power Dissipation Pd:74W; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
メーカーの別名
Vishayは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Vishay は以下の名前でも知られているかもしれません：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -88.38%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
技術仕様
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)5 A
Current5 A
Current Rating5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance620 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation74 W
Min Operating Temperature-55 °C
Nominal Vgs4.5 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation74 W
Rds On Max1.4 Ω
Recovery Time650 ns
Resistance1.4 Ω
Rise Time21 ns
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time21 ns
Turn-On Delay Time10 ns
Voltage500 V
Voltage Rating (DC)500 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm