Infineon IRF7424TRPBF
Production
技術仕様
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)-11 A
Current Rating-11 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)-30 V
Fall Time76 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.03 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs-2.5 V
Number of Channels1
Number of Elements1
On-State Resistance13.5 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max13.5 mΩ
Resistance13.5 MΩ
Rise Time23 ns
Schedule B8541290080
Threshold Voltage-2.5 V
Turn-Off Delay Time150 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Inventory History
3 month trend: +35.42%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
代替部品
Price @ 1000
$ 0.616
$ 0.212
Stock
1,432,325
813,172
Authorized Distributors
15
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOP
Drain to Source Voltage (Vdss)
-30 V
30 V
Continuous Drain Current (ID)
-11 A
12 A
Threshold Voltage
-2.5 V
-
Rds On Max
13.5 mΩ
14 mΩ
Gate to Source Voltage (Vgs)
20 V
25 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
4.03 nF
1.802 nF
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRF7424TRPBF.
関連部品
InfineonIRF7424PBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S
InfineonIRF9328TRPBF
Single P-Channel 30 V 19.7 mOhm 52 nC HEXFET® Power Mosfet - SOIC-8
onsemiFDS6680A
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ
説明
Infineon IRF7424TRPBFの詳細は販売業者から提供されます。
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET
Single P-Channel 30V 22 mOhm 110 nC HEXFET® Power Mosfet - SOIC-8
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
P CHANNEL MOSFET, 11A; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0135ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage V
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-11A; Package/Case:8-SOIC; Power Dissipation, Pd:2.5W; Drain Source On Resistance @ 10V:13.5mohm; Drain Source On Resistance @ 4.5V:22mohm ;RoHS Compliant: Yes
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +35.42%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
技術仕様
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)-11 A
Current Rating-11 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)-30 V
Fall Time76 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.03 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs-2.5 V
Number of Channels1
Number of Elements1
On-State Resistance13.5 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max13.5 mΩ
Resistance13.5 MΩ
Rise Time23 ns
Schedule B8541290080
Threshold Voltage-2.5 V
Turn-Off Delay Time150 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm