onsemi FQU13N06LTU
EOL
技術仕様
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Weight343.08 mg
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance92 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max115 mΩ
Rise Time90 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time20 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)60 V
Dimensions
Height6.1 mm
Length6.6 mm
Width2.3 mm
Inventory History
3 month trend: +72.76%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
代替部品
Price @ 1000
$ 0.462
$ 0.559
Stock
415,083
263,668
Authorized Distributors
6
4
Mount
Through Hole
Through Hole
Case/Package
TO-251-3
TO-251-3
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
11 A
11 A
Threshold Voltage
2.5 V
-
Rds On Max
115 mΩ
115 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
350 pF
350 pF
Supply Chain
Lifecycle StatusEOL (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FQU13N06LTU.
関連部品
STMicroelectronicsSTD12NF06L-1
N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package
onsemiRFD3055LE
N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ
onsemiHUFA76407D3
12 A 60 V 0.117 ohm N-CHANNEL Si POWER MOSFET TO-251AA
説明
onsemi FQU13N06LTUの詳細は販売業者から提供されます。
MOSFET Transistor, N Channel, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, IPAK
MOSFET, N CH, 60V, 11A, TO-251AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.092ohm; Available until stocks are exhausted Alternative available
Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +72.76%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
技術仕様
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Weight343.08 mg
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance92 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max115 mΩ
Rise Time90 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time20 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)60 V
Dimensions
Height6.1 mm
Length6.6 mm
Width2.3 mm