Nexperia BST52,115
Production
技術仕様
Physical
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)90 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1.3 V
Collector Emitter Voltage (VCEO)80 V
Emitter Base Voltage (VEBO)5 V
hFE Min1000
Max Collector Current1 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Number of Elements1
PackagingDigi-Reel®
PolarityNPN
Power Dissipation1.3 W
Schedule B8541290080
Dimensions
Height1.6 mm
Inventory History
3 month trend: +3.06%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
代替部品
Price @ 1000
$ 0.174
$ 0.107
Stock
842,710
453,394
Authorized Distributors
15
11
Mount
-
-
Case/Package
-
-
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
-
Max Collector Current
1 A
-
Transition Frequency
-
-
Collector Emitter Saturation Voltage
1.3 V
-
hFE Min
1000
-
Power Dissipation
1.3 W
-
Supply Chain
Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 1 day ago)
Engineering Resources
View Evaluation kits and Reference designs for Nexperia BST52,115.
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Diodes Inc.BCX5616TA
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Diodes Inc.BCX56TA
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
説明
Nexperia BST52,115の詳細は販売業者から提供されます。
BST52 Series 80 V 1 A 1.3 W SMT NPN Darlington Transistor - SOT-89-3
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
Trans Darlington NPN 80V 1A 1300mW Automotive 4-Pin(3+Tab) SOT-89 T/R
NPN-Darl+Dio 80V 1A 1,3W B>1000 SOT89
DARLINGTON TRANSISTOR, SOT-89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 1.3W; DC Collector Current: 1A; DC Current Gain hFE: 2000hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Av Current Ic: 500mA; Collector Emitter Saturation Voltage Vce(on): 1.3V; Continuous Collector Current Ic Max: 1A; Current Ic Continuous a Max: 1A; Current Ic hFE: 500mA; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 2000; No. of Transistors: 1; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Ptot Max: 1.3W; SMD Marking: AS3; Transistor Type: Darlington; Voltage Vcbo: 90V
メーカーの別名
Nexperiaは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Nexperia は以下の名前でも知られているかもしれません：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NEXP
- NXP/NEXPERIA
- Nexperia USA
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- Nexperi
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/PHILIPS
- NEX-NXP
Inventory History
3 month trend: +3.06%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
技術仕様
Physical
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)90 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1.3 V
Collector Emitter Voltage (VCEO)80 V
Emitter Base Voltage (VEBO)5 V
hFE Min1000
Max Collector Current1 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Number of Elements1
PackagingDigi-Reel®
PolarityNPN
Power Dissipation1.3 W
Schedule B8541290080
Dimensions
Height1.6 mm