Diodes Inc. BC817-40-7-F
技術仕様
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage700 mV
Collector Emitter Voltage (VCEO)45 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
Max Breakdown Voltage45 V
Max Collector Current800 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation310 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
Schedule B8541210080
Transition Frequency100 MHz
Dimensions
Height1 mm
Length3.05 mm
Width1.4 mm
Inventory History
3 month trend: +74.41%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
代替部品
Price @ 1000
$ 0.027
$ 0.03
Stock
8,206,686
85,311,462
Authorized Distributors
11
15
Mount
Surface Mount
-
Case/Package
SOT-23
-
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
45 V
45 V
Max Collector Current
800 mA
500 mA
Transition Frequency
100 MHz
-
Collector Emitter Saturation Voltage
700 mV
700 mV
hFE Min
-
250
Power Dissipation
350 mW
250 mW
Engineering Resources
View Evaluation kits and Reference designs for Diodes Inc. BC817-40-7-F.
関連部品
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onsemiBC81716MTF
BC817 Series 45 V CE Breakdown .8 A NPN Epitaxial Silicon Transistor - SOT-23
説明
Diodes Inc. BC817-40-7-Fの詳細は販売業者から提供されます。
TRANS NPN 45V 0.8A SOT23-3 / Trans GP BJT NPN 45V 0.5A 350mW 3-Pin SOT-23 T/R
45V 310mW 250@100mA,1V 500mA NPN SOT-23-3 Bipolar Transistors - BJT ROHS
BC817-40 Series NPN 45 V 310 mW Small Signal Transisitor Surface Mount -SOT-23-3
DIODES INC. - BC817-40-7-F - Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 310 mW, 500 mA, 250 hFE
Transistor NPN 0.8A 45V 250hfe SOT23 | Diodes Inc BC817-40-7-F
Transistor,NPN,45V,0.5A,SOT23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation
TRANSISTOR,NPN,45V,0.5A,SOT23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 310mW; DC Collector Current: 500mA; DC Current Gain hFE: 250hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Gain Bandwidth ft Typ: 100MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C
メーカーの別名
Diodes Inc.は世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Diodes Inc. は以下の名前でも知られているかもしれません：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
Inventory History
3 month trend: +74.41%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
技術仕様
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage700 mV
Collector Emitter Voltage (VCEO)45 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
Max Breakdown Voltage45 V
Max Collector Current800 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation310 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
Schedule B8541210080
Transition Frequency100 MHz
Dimensions
Height1 mm
Length3.05 mm
Width1.4 mm