onsemi 2N7002
Production
技術仕様
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)115 mA
Current115 mA
Current Rating115 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation200 mW
Rds On Max7.5 Ω
Resistance5.3 Ω
Schedule B8541210080
Threshold Voltage2.1 V
Turn-Off Delay Time20 ns
Turn-On Delay Time20 ns
Voltage60 V
Voltage Rating (DC)60 V
Dimensions
Height930 µm
Length2.92 mm
Width3.05 mm
Inventory History
3 month trend: +37.32%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
代替部品
Price @ 1000
$ 0.13
$ 0.041
Stock
7,465,674
32,562,200
Authorized Distributors
10
9
Mount
Surface Mount
-
Case/Package
SOT-23
SOT-23-3
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
115 mA
115 mA
Threshold Voltage
2.1 V
1 V
Rds On Max
7.5 Ω
7.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
200 mW
225 mW
Input Capacitance
50 pF
50 pF
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi 2N7002.
関連部品
Diodes Inc. 2N7002-7-F
Power MOSFET, N Channel, 60 V, 115 mA, 7.5 Ohm, SOT-23, 3 Pins, Surface Mount
Diodes Inc. 2N7002TA
Trans MOSFET N-CH 60V 0.115A Automotive 3-Pin SOT-23 T/R
onsemi NDS7002A
N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 5Ω
説明
onsemi 2N7002の詳細は販売業者から提供されます。
N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 7.5Ω
N-Channel 60 V 7.5 Ohm SMT Enhancement Mode Field Effect Transistor SOT-23
Transistor MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
MOSFET, N, 60V, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissip
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 115 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 7.5 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 200
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +37.32%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
技術仕様
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)115 mA
Current115 mA
Current Rating115 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation200 mW
Rds On Max7.5 Ω
Resistance5.3 Ω
Schedule B8541210080
Threshold Voltage2.1 V
Turn-Off Delay Time20 ns
Turn-On Delay Time20 ns
Voltage60 V
Voltage Rating (DC)60 V
Dimensions
Height930 µm
Length2.92 mm
Width3.05 mm