onsemi 2N5088BU
Obsolete
技術仕様
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Weight179 mg
Technical
Collector Base Voltage (VCBO)35 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)4.5 V
Frequency50 MHz
Gain Bandwidth Product50 MHz
hFE Min300
Max Collector Current100 mA
Max Frequency50 MHz
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation625 mW
Transition Frequency50 MHz
Voltage Rating (DC)30 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
代替部品
Price @ 1000
$ 0.029
Stock
141,707
317,013
Authorized Distributors
0
1
Mount
Through Hole
-
Case/Package
TO-92
TO-92
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
30 V
Max Collector Current
100 mA
50 mA
Transition Frequency
50 MHz
50 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
hFE Min
300
300
Power Dissipation
625 mW
625 mW
Supply Chain
Lifecycle StatusObsolete (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi 2N5088BU.
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Trans GP BJT NPN 25V 0.1A 3-Pin TO-92 Bulk
onsemiBC548CBU
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 420 @ 2mA 5V 100mA 500mW 300MHz
説明
onsemi 2N5088BUの詳細は販売業者から提供されます。
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Low Noise NPN Bipolar Transistor, TO-92
Trans GP BJT NPN 30V 0.1A 625mW 3-Pin TO-92 Bag
2N5088 Series 30 V CE Breakdown 0.1 A NPN General Purpose Amplifier - TO-92
Small Signal Transistors NPN Transistor General Purpose
This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 µA to 50 mA.
BIPOLAR TRANSISTOR, NPN, 30V, TO-92; Tra; BIPOLAR TRANSISTOR, NPN, 30V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:50MHz; Power Dissipation Pd:625mW; DC Collector Current:100mA; DC Current Gain hFE:350; No. of Pins:3
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
技術仕様
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Weight179 mg
Technical
Collector Base Voltage (VCBO)35 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)4.5 V
Frequency50 MHz
Gain Bandwidth Product50 MHz
hFE Min300
Max Collector Current100 mA
Max Frequency50 MHz
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation625 mW
Transition Frequency50 MHz
Voltage Rating (DC)30 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm