Vishay SIHG30N60E-E3

MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity: N Channel; Continuous Dra
$ 3.41
Production
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Vishay SIHG30N60E-E3.

IHS

Datasheet10 pagine5 anni fa
Datasheet8 pagine13 anni fa

element14 APAC

Farnell

Newark

Future Electronics

Parti alternative

Price @ 1000
$ 3.41
$ 3.7
$ 3.7
Stock
9,519
89,856
89,856
Authorized Distributors
3
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-247-3
TO-247-3
TO-247-3
Drain to Source Voltage (Vdss)
600 V
600 V
600 V
Continuous Drain Current (ID)
29 A
29 A
29 A
Threshold Voltage
2 V
2 V
2 V
Rds On Max
125 mΩ
125 mΩ
125 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
250 W
250 W
250 W
Input Capacitance
2.6 nF
2.6 nF
2.6 nF

Supply Chain

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Vishay SIHG30N60E-E3 fornite dai suoi distributori.

MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
MOSFET N-CH 600V 29A TO247AC / N-Channel 600 V 29A (Tc) 250W (Tc) Through Hole TO-247AC
Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

Alias del produttore

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