Vishay SIHD3N50D-GE3
$ 0.434
Obsolete
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Distributori autorizzati
Distributori di stock non autorizzati
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | SIHD3N50D-GE3 | 0 | 1 | 11h | ||||||||
| Farnell | SIHD3N50D-GE3 | 0 | 1 | Cut Tape | 12h | |||||||
| element14 APAC | SIHD3N50D-GE3 | 0 | 1 | Cut Tape | 2h | |||||||
| Mouser | 78-SIHD3N50D-GE3 | 5031 | 1 | Tube | ||||||||
| Microchip USA | SIHD3N50D-GE3 | 221 | 300 | Tube | 1d |
Cronologia dell'inventario
Tendenza a 3 mesi: -3.81%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-05-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-04
LTD Date2025-05-04
Parti correlate
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N-CHANNEL 400V - 1.47 OHM - 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
STMicroelectronicsSTD12NF06T4
N-Channel 60V - 0.08Ohm - 12A - DPAK StripFET(TM) II POWER MOSFET
Descrizioni
Descrizioni di Vishay SIHD3N50D-GE3 fornite dai suoi distributori.
Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK
POWER MOSFET Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 500V, 3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:500V; On Resistance Rds(on):2.6ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -3.81%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance3.2 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance175 pF
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation104 W
Rds On Max3.2 Ω
Rise Time9 ns
Threshold Voltage3 V
Turn-Off Delay Time11 ns
Turn-On Delay Time12 ns
Dimensions
Height2.38 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Dichiarazioni di conformità