Vishay SIHD5N50D-GE3
$ 0.575
Obsolete
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | SIHD5N50D-GE3 | 0 | 1 | 22h | ||||||||
| Farnell | SIHD5N50D-GE3 | 0 | 1 | Cut Tape | 23h | |||||||
| element14 APAC | SIHD5N50D-GE3 | 0 | 1 | Cut Tape | 12h | |||||||
| Win Source | WS-SIHD5N50D-GE3 | 6000 | 6 | 1d | ||||||||
| Esaler Electronic | SIHD5N50D-GE3 | 3000 | 5d |
Parti correlate
STMicroelectronicsSTD7N52DK3
Mosfet Transistor, N Channel, 6 A, 525 V, 0.95 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
onsemiFDD6N50TM-WS
Mosfet Transistor, N Channel, 6 A, 500 V, 0.76 Ohm, 10 V, 5 V |Onsemi FDD6N50TM_WS
STMicroelectronicsSTD5NK40ZT4
N-CHANNEL 400V - 1.47 OHM - 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
Descrizioni
Descrizioni di Vishay SIHD5N50D-GE3 fornite dai suoi distributori.
D Series 500 V 5.3 A 1.5 Ohm Single N-Channel Power MOSFET - TO-252
Trans MOSFET N-CH 500V 5.3A 3-Pin(2+Tab) DPAK
MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS
Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET N-CH 500V 5.3A TO252 DPK
MOSFET, N-CH, 500V, 5.3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Specifiche tecniche
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)5.3 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance325 pF
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation104 W
Rds On Max1.5 Ω
Rise Time11 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time14 ns
Turn-On Delay Time12 ns
Dimensions
Height2.38 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Dichiarazioni di conformità