Vishay SI7108DN-T1-GE3
$ 1.045
NRND
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | SI7108DN-T1-GE3 | 2089 | 1 | |||||||||
| Verical | SI7108DN-T1-GE3 | 2089 | 2 | |||||||||
| DigiKey | SI7108DN-T1-GE3CT-ND | 5905 | 1 | Cut Tape | ||||||||
| TTI | SI7108DN-T1-GE3 | 15.000 | 3K | Tape & Reel | 5h | |||||||
| TME | SI7108DN-T1-GE3 | 0 | 3K | 3h |
Cronologia dell'inventario
Tendenza a 3 mesi: -0.04%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Parti correlate
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2.1W 20V 2V 7.7nC@ 4.5V,16nC@ 10V 1N 25V 3.6m¦¸@ 10V 40A 1.2nF@ 12V SON , 3.3mm*3.3mm*1.1mm
Descrizioni
Descrizioni di Vishay SI7108DN-T1-GE3 fornite dai suoi distributori.
N-Channel 20 V 3.8 W 4.9 mohm SMT Fast Switching Mosfet - PowerPAK 1212-8
1.5W(Ta) 16V 2V@ 250¦ÌA 30nC@ 4.5 V 1N 20V 4.9m¦¸@ 22A,10V 14A 1212 3.05mm*3.05mm*1.07mm
Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 T/R
Power Field-Effect Transistor, 14A I(D), 20V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CHANNEL MOSFET, 20V, 22A POWERPAK
MOSFET, N CH, 20V, 14A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -0.04%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance4.9 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)16 V
Max Operating Temperature150 °C
Max Power Dissipation3.8 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.5 W
Rds On Max4.9 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time60 ns
Turn-On Delay Time10 ns
Dimensions
Height1.04 mm
Length3.05 mm
Width3.05 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità