Vishay SI4946BEY-T1-E3
Obsolete
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | SI4946BEY-T1-E3 | 0 | 2500 | Cut Tape | ||||||||
| Conrad | 597347 | 124 | 15h | |||||||||
| TTI Asia | SI4946BEY-T1-E3 | Contatto | 12h | |||||||||
| TTI Europe | SI4946BEY-T1-E3 | 0 | 2500 | Tape & Reel | 12h | |||||||
| element14 APAC | SI4946BEY-T1-E3 | 0 | 1 | Cut Tape | 21h |
Cronologia dell'inventario
Tendenza a 3 mesi: -2.70%
Modelli CAD
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Modelli CAD
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Supply Chain
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-05-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-01-21
LTD Date2025-07-21
Descrizioni
Descrizioni di Vishay SI4946BEY-T1-E3 fornite dai suoi distributori.
Transistor MOSFET Array Dual N-CH 60V 6.5A 8-Pin SOIC T/R
SI4946 Series 60 V 0.041 Ohm 25 nC Dual N-Channel SMT Power Mosfet - SOIC-8
Power Field-Effect Transistor, 6.5A I(D), 60V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
DUAL N CHANNEL MOSFET, 60V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold V
Dual N Channel Mosfet, 60V, Soic, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:6.5A; Continuous Drain Current Id P Channel:- Rohs Compliant: No |Vishay SI4946BEY-T1-E3.
MOSFET, DUAL, N, SOIC; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:60V; Current, Id Cont:6.5A; Resistance, Rds On:0.041ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.4V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-50°C to +175°C; Base Number:4946; N-channel Gate Charge:9.2nC; No. of Pins:8; Resistance, Rds on @ Vgs = 10V:0.041ohm; Resistance, Rds on @ Vgs = 4.5V:0.052ohm; Voltage, Vds Max:60V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -2.70%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)6.5 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance41 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationDual
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance840 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.7 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation3.7 W
Rds On Max41 mΩ
Resistance41 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage2.4 V
Turn-Off Delay Time25 ns
Turn-On Delay Time10 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità