Vishay SI4900DY-T1-GE3
$ 0.653
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TTI Asia | SI4900DY-T1-GE3 | Contatto | 1d | |||||||||
| TTI Europe | SI4900DY-T1-GE3 | 0 | 2500 | Tape & Reel | 20h | |||||||
| Farnell | SI4900DY-T1-GE3 | 0 | 1 | Cut Tape | 17h | |||||||
| Mouser | 781-SI4900DY-GE3 | 1125 | 1 | Tape & Reel | ||||||||
| Component Stockers USA | SI4900DY-T1-GE3 | 14.385 | >1wk |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-03-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-03
LTD Date2025-05-03
Descrizioni
Descrizioni di Vishay SI4900DY-T1-GE3 fornite dai suoi distributori.
Transistor MOSFET Array Dual N-CH 60V 5.3A 8-Pin SOIC T/R
Avnet Japan
MOSFET 2N-CH 60V 5.3A 8-SOIC / Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
COMPLEMENTARY MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:5.3A; On Resistance, Rds(on):0.072ohm; Rds(on) Test Voltage, Vgs:4.5V ;RoHS Compliant: Yes
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC N
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)5.3 A
Drain to Source Resistance58 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationDual
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance665 pF
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation2 W
Rds On Max58 mΩ
Rise Time65 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time15 ns
Turn-On Delay Time15 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità