Vishay SI4925BDY-T1-E3
$ 0.73
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | SI4925BDY-T1-E3 | 0 | 1 | 20h | ||||||||
| Newark | SI4925BDY-T1-E3 | 0 | 2500 | Cut Tape | ||||||||
| TTI Asia | SI4925BDY-T1-E3 | Contatto | 10h | |||||||||
| Microchip USA | SI4925BDY-T1-E3 | 2541 | 600 | 38m | ||||||||
| Component Stockers USA | SI4925BDY-T1-E3 | 62.935 | >1wk |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Vishay SI4925BDY-T1-E3.
Modelli CAD
Scarica il simbolo Vishay SI4925BDY-T1-E3, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 SnapEDA | 3D | Scarica | |
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.73
$ 1.22
Stock
250,653
179,766
Authorized Distributors
3
4
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
-30 V
-
Continuous Drain Current (ID)
5.3 A
5.3 A
Threshold Voltage
-1 V
-
Rds On Max
25 mΩ
25 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.1 W
-
Input Capacitance
-
-
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-09-27
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2025-01-21
LTD Date2025-07-21
Parti correlate
VishaySI4485DY-T1-GE3
Single P-Channel 30 V 0.042 Ohm 5 W Surface Mount Power Mosfet - SOIC-8
Diodes Inc.DMN3018SSD-13
Dual N-Channel 30 V 30 mOhm 6 nC 1.5 W Silicon Surface Mount Mosfet - SOIC-8
Descrizioni
Descrizioni di Vishay SI4925BDY-T1-E3 fornite dai suoi distributori.
Dual P-Channel 30 V 0.025 Ohms Surface Mount Power Mosfet - SOIC-8
Transistor MOSFET Array Dual P-CH 30V 5.3A 8-Pin SOIC T/R
DUAL P-CHANNEL 30-V (D-S) MOSFET Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-7.1A; On Resistance, Rds(on):0.025ohm; Rds(on) Test Voltage, Vgs:-10V ;RoHS Compliant: Yes
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)5.3 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage30 V
Element ConfigurationDual
Fall Time34 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Channels2
Number of Elements2
Power Dissipation1.1 W
Rds On Max25 mΩ
Resistance25 mΩ
Rise Time12 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-1 V
Turn-Off Delay Time60 ns
Turn-On Delay Time9 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Vishay SI4925BDY-T1-E3.
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità