Vishay SI4630DY-T1-E3
$ 1.238
Production
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SI4630DY-T1-E3CT-ND | 2164 | 1 | Cut Tape | ||||||||
| TME | SI4630DY-T1-E3 | 0 | 2500 | 11h | ||||||||
| TTI | SI4630DY-T1-E3 | 0 | 2500 | Tape & Reel | 1d | |||||||
| Newark | SI4630DY-T1-E3 | 0 | 2500 | Cut Tape | ||||||||
| Future Electronics | SI4630DY-T1-E3 | 0 | 2500 | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: -8.33%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-04-13
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
NXP SemiconductorsPSMN012-25YLC,115
Power Field-Effect Transistor, 33A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Descrizioni
Descrizioni di Vishay SI4630DY-T1-E3 fornite dai suoi distributori.
Si4630DY Series Single N-Channel 25 V 2.7 mOhms 7.8 W SMT Power Mosfet - SOIC-8
Trans MOSFET N-CH 25V 27A 8-Pin SOIC N T/R
3.5W(Ta),7.8W(Tc) 16V 2.2V@ 250¦ÌA 161nC@ 10 V 1N 25V 2.7m¦¸@ 20A,10V 40A 6.67nF@15V SOIC-8 4.9mm*3.9mm*1.75mm
Power Field-Effect Transistor, 27A I(D), 25V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel MOSFETs N-CH 25V(D-S)
IC SY58021U 1:4 CLOCK FANOUT BUFFER L
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:36A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0027ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1V; Power Dissipation, Pd:3.5W ;RoHS Compliant: Yes
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -8.33%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)27 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance2.7 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance6.67 nF
Max Operating Temperature150 °C
Max Power Dissipation7.8 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
Power Dissipation3.5 W
Rds On Max2.7 mΩ
Resistance2.7 MΩ
Rise Time93 ns
Schedule B8541290080
Turn-Off Delay Time60 ns
Turn-On Delay Time17 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità