Vishay SI4626ADY-T1-E3
NRND
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | SI4626ADY-T1-E3 | 0 | 2500 | 10h | ||||||||
| TTI | SI4626ADY-T1-E3 | 0 | 2500 | Tape & Reel | 14h | |||||||
| Avnet | SI4626ADY-T1-E3 | 0 | 2500 | 1d | ||||||||
| Win Source | WS-SI4626ADY-T1-E3 | 25.288 | 35 | 12h | ||||||||
| Esaler Electronic | SI4626ADY-T1-E3 | 2500 | 1d |
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Descrizioni
Descrizioni di Vishay SI4626ADY-T1-E3 fornite dai suoi distributori.
Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R
Power Field-Effect Transistor, 21.5A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 30V 30A 6.0W 3.3mohm @ 10V
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:30000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0041ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:3W ;RoHS Compliant: Yes
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Specifiche tecniche
Physical
Case/PackageSO
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)21.5 A
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.37 nF
Max Operating Temperature150 °C
Max Power Dissipation6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3 W
Rds On Max3.3 mΩ
Rise Time21 ns
Turn-Off Delay Time45 ns
Turn-On Delay Time44 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità