Vishay SI4420BDY-T1-GE3

Trans Mosfet N-ch 30V 9.5A 8-PIN SOIC N T/r
$ 0.793
NRND
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
DigiKey
3
742-SI4420BDY-T1-GE3CT-ND29041Cut Tape
TME
2
SI4420BDY-T1-GE302500
14h
TTISI4420BDY-T1-GE302500Tape & Reel
18h
AvnetSI4420BDY-T1-GE302500
18h
Future ElectronicsSI4420BDY-T1-GE302500Tape & Reel

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Vishay SI4420BDY-T1-GE3.

IHS

Datasheet8 pagine9 anni fa

Newark

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VishaySI4420BDY-T1-GE3
VishaySI4420BDY-T1-E3
Price @ 1000
$ 0.793
$ 0.728
Stock
31,398
178,012
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SO
SOIC
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
9.5 A
9.5 A
Threshold Voltage
-
3 V
Rds On Max
8.5 mΩ
8.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.4 W
1.4 W
Input Capacitance
-
-

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-08-13
Lifecycle StatusNRND (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Vishay SI4420BDY-T1-GE3 fornite dai suoi distributori.

Trans MOSFET N-CH 30V 9.5A 8-Pin SOIC N T/R
Verical
30V, 13.5A, 0.0085ohm,TrenchFET Power MOSFET, N-Channel, SO-8
Future Electronics
Power Field-Effect Transistor, 9.5A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:13500mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.011ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:1.4W ;RoHS Compliant: Yes
Newark

Immagini

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Alias del produttore

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