Vishay SI2307CDS-T1-GE3
$ 0.194
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SI2307CDS-T1-GE3 | 6000 | 3K | 4d | ||||||||
| Newark | SI2307CDS-T1-GE3 | 73 | 1 | Cut Tape | ||||||||
| Verical | SI2307CDS-T1-GE3 | 79 | 52 | |||||||||
| Arrow Electronics | SI2307CDS-T1-GE3 | 79 | 1 | |||||||||
| Future Electronics | SI2307CDS-T1-GE3 | 99.000 | 3K | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: -11.29%
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Questo componente
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Price @ 1000
$ 0.194
$ 0.272
Stock
2,206,731
1,077,890
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
-30 V
-30 V
Continuous Drain Current (ID)
2.7 A
2.7 A
Threshold Voltage
-3 V
-
Rds On Max
88 mΩ
88 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.1 W
1.1 W
Input Capacitance
340 pF
340 pF
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Descrizioni
Descrizioni di Vishay SI2307CDS-T1-GE3 fornite dai suoi distributori.
Power MOSFET, P Channel, 30 V, 3.5 A, 88 MilliOhms, SOT-23 (TO-236), 3 Pins, Surface Mount
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.088ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
P CHANNEL MOSFET, -30V, 2.7A TO-236, FUL; P CHANNEL MOSFET, -30V, 2.7A TO-236, FULL REEL; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.7A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.138ohm; R
MOSFET, P-CH, 30V, 3.5A, SOT23; Transistor Polarity:P Channel; Drain Source Voltage Vds:-30V; On Resistance Rds(on):73mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:1.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-3.5A; Power Dissipation Pd:1.1W; Voltage Vgs Max:20V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -11.29%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Continuous Drain Current (ID)2.7 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance88 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance340 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.1 W
Rds On Max88 mΩ
Resistance88 MΩ
Rise Time40 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time17 ns
Turn-On Delay Time5.5 ns
Dimensions
Height1.12 mm
Length3.04 mm
Width1.4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità