Vishay SI2307BDS-T1-GE3
$ 0.304
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -0.43%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Vishay SI2307BDS-T1-GE3.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.304
$ 0.284
Stock
133,609
1,110,802
Authorized Distributors
3
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
30 V
-30 V
Continuous Drain Current (ID)
2.5 A
2.5 A
Threshold Voltage
-
-3 V
Rds On Max
78 mΩ
78 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
750 mW
750 mW
Input Capacitance
380 pF
380 pF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-02-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-03
LTD Date2025-05-03
Parti correlate
VishaySI2304BDS-T1-GE3
Single N-Channel 30 V 0.07 Ohm 0.75 W Surface Mount Power Mosfet - SOT-23-3
VishaySI2307CDS-T1-GE3
Power MOSFET, P Channel, 30 V, 3.5 A, 88 MilliOhms, SOT-23 (TO-236), 3 Pins, Surface Mount
Diodes Inc.DMP3160L-7
Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 2.7A SOT23-3
Diodes Inc.DMN3200U-7
Single N-Channel 30 V 200 mOhm 650 mW Silicon Surface Mount Mosfet - SOT-23
Diodes Inc.DMN3300U-7
N-Channel 30 V 150 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
Descrizioni
Descrizioni di Vishay SI2307BDS-T1-GE3 fornite dai suoi distributori.
Si2307BDS Series 30 V 2.5 A Surface Mount P-Channel Mosfet - SOT-23-3 (TO-236)
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
30V 2.5A 750mW 78m´Î@10V3.2A 3V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
Power Field-Effect Transistor, 2.5A I(D), 30V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):78mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.5A; Junction Temperature Tj Max:150°C; Package / Case:SOT-23; Power Dissipation Pd:750mW; Power Dissipation Pd:750mW; Rise Time:12ns; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -0.43%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Continuous Drain Current (ID)2.5 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance78 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance380 pF
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation750 mW
Rds On Max78 mΩ
Rise Time12 ns
TerminationSMD/SMT
Turn-Off Delay Time25 ns
Turn-On Delay Time9 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Vishay SI2307BDS-T1-GE3.
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità