Vishay IRFU320PBF

Single N-Channel 400 V 1.8 Ohms Through Hole Power Mosfet - IPAK (TO-251)
$ 0.582
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Avnet
2
IRFU320PBF20503K
17h
NewarkIRFU320PBF30001
Verical
2
IRFU320PBF30003K
Arrow ElectronicsIRFU320PBF30003K
Future ElectronicsIRFU320PBF94740Tube

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Vishay IRFU320PBF.

Newark

Datasheet13 pagine4 anni fa
Datasheet11 pagine14 anni fa
Datasheet8 pagine16 anni fa
Datasheet8 pagine17 anni fa
Datasheet11 pagine11 anni fa

element14 APAC

RS (Formerly Allied Electronics)

TME

iiiC

Cronologia dell'inventario

Trend di 3 mesi:
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Parti alternative

Questo componente
Parti alternative
VishayIRFU320PBF
VishaySIHFU320-GE3
Price @ 1000
$ 0.582
$ 0.372
Stock
270,985
800
Authorized Distributors
6
2
Mount
Through Hole
-
Case/Package
TO-251-3
-
Drain to Source Voltage (Vdss)
400 V
-
Continuous Drain Current (ID)
3.1 A
3.1 A
Threshold Voltage
4 V
-
Rds On Max
1.8 Ω
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
-
-
Input Capacitance
350 pF
-

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Vishay IRFU320PBF fornite dai suoi distributori.

Single N-Channel 400 V 1.8 Ohms Through Hole Power Mosfet - IPAK (TO-251)
Future Electronics
MOSFET, POWER, N-CH, VDSS 400V, RDS(ON) 1.8 OHMS, ID 3.1A, TO-251AA, PD 2.5W, VGS+/-20V
RS (Formerly Allied Electronics)
POWER MOSFET Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
ComSIT Distribution GmbH
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:400V; Continuous Drain Current, Id:3.1A; On Resistance, Rds(on):1.8ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
Newark
MOSFET, N, 400V, 3.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:3.1A; Fall Time tf:13ns; Junction to Case Thermal Resistance A:3°C/W; Package / Case:IPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:12A; Rise Time:14ns; Termination Type:Through Hole; Turn Off Time:30ns; Turn On Time:10ns; Voltage Vds Typ:400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
element14 APAC

Immagini

Vishay
DKO Electronshik
RS (Formerly Allied Electronics)
TME
Newark
iiiC
Future Electronics

Alias del produttore

Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • Vishay Thin Film
  • Vishay Intertechnology
  • VISHA
  • Vishay Semiconductors
  • VISAHY
  • Vishay Intertech
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • Vishay Intertechnologies
  • Vishay General Semiconductor - Diodes Division
  • Vishay Semiconductor Opto Division
  • VSHAY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY ELECTRONIC
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY OPTO
  • VISHAY FOIL RESISTORS
  • Vishay Polytech
  • Vishay Semiconductor
  • Vishay Sfernice
  • Vishay Siliconix
  • Vishay Dale
  • Vishay BCcomponents
  • Vishay Angstrohm
  • Vishay Draloric