STMicroelectronics STW43NM60N
$ 8.15
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | STW43NM60N | 0 | 10 | Bulk | 15h | |||||||
| Farnell | STW43NM60N | 0 | 1 | 1h | ||||||||
| Microchip USA | STW43NM60N | 399 | 300 | Tray | 18h | |||||||
| Win Source | WS-STW43NM60N | 26.400 | 11 | 2h | ||||||||
| Worldway Electronics | STW43NM60N | 15.309 | 7 | Tube | 40m |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STW43NM60N.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 8.15
$ 2.258
Stock
152,778
240,048
Authorized Distributors
2
6
Mount
Through Hole
Through Hole
Case/Package
TO-247
TO-247-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
35 A
34 A
Threshold Voltage
-
-
Rds On Max
88 mΩ
88 mΩ
Gate to Source Voltage (Vgs)
30 V
25 V
Power Dissipation
255 W
-
Input Capacitance
4.2 nF
2.5 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-11-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-29
LTD Date2018-12-29
Parti correlate
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N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh M5 Power MOSFET in TO-247 package
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MOSFET N-CH 600V 37.9A TO247-3 / N-Channel 600 V 37.9A (Tc) 278W (Tc) Through Hole PG-TO247-3
InfineonIPW65R080CFDAFKSA1
Power MOSFET, AEC-Q101, N Channel, 650 V, 43.3 A, 0.072 ohm, TO-247, Through Hole
Descrizioni
Descrizioni di STMicroelectronics STW43NM60N fornite dai suoi distributori.
N-channel 600V - 0.075Y - 35A - TO-247 second generation MDmesh™ Power MOSFET
MOSFET Transistor, N Channel, 17.5 A, 600 V, 75 mohm, 10 V, 3 V
N-CHANNEL 600 V-0.075 OHM-35 A-TO-247 SECOND GENERATION MDMESH POWER MOSFET Power Field-Effect Transistor, 35A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:17.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:255W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:35A; Package / Case:TO-247; Power Dissipation Pd:255W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Specifiche tecniche
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance95 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.2 nF
Max Operating Temperature150 °C
Max Power Dissipation255 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation255 W
Rds On Max88 mΩ
Resistance88 mΩ
Rise Time45 ns
Turn-Off Delay Time130 ns
Turn-On Delay Time25 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STW43NM60N.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant