onsemi FCH35N60

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-247
$ 2.93
Obsolete
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IHS

Datasheet9 pagine5 anni fa
Datasheet8 pagine12 anni fa

onsemi

element14 APAC

Fairchild Semiconductor

Farnell

Cronologia dell'inventario

Trend di 3 mesi:
-2.73%

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-12-23
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descrizioni

Descrizioni di onsemi FCH35N60 fornite dai suoi distributori.

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-247
Power Field-Effect Transistor, 35A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:105A
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

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