STMicroelectronics STP75NF20
$ 1.721
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Cronologia dell'inventario
Tendenza a 3 mesi: +11.44%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-26
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descrizioni
Descrizioni di STMicroelectronics STP75NF20 fornite dai suoi distributori.
N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in TO-220 package
STP75NF20 N-CHANNEL MOSFET TRANSISTOR, 75 A, 200 V, 3-PIN TO-220
Single N-Channel 200 V 190 W 84 nC Silicon Through Hole Mosfet - TO-220-3
Power MOSFET, N Channel, 200 V, 75 A, 0.034 ohm, TO-220, Through Hole
Trans MOSFET N-CH 200V 75A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 75A I(D), 200V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube STripFETseries, Vds=200 V, 75 A, TO-220encapsulation, Through hole mounting, 3Pin
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Cronologia dell'inventario
Tendenza a 3 mesi: +11.44%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance34 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.26 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage200 V
Min Operating Temperature-50 °C
Number of Channels1
Number of Elements1
Power Dissipation190 W
Rds On Max34 mΩ
Resistance5.9 MΩ
Rise Time33 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time75 ns
Turn-On Delay Time53 ns
Dimensions
Height19.68 mm
Length10.4 mm
Width4.6 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant