STMicroelectronics STGF30H60DF

Trans IGBT Chip N-CH 600V 34A 31000mW 3-Pin(3+Tab) TO-220FP Tube
$ 3.44
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
DigiKey497-13581-5-ND11Tube
FarnellSTGF30H60DF01
1d
Microchip USASTGF30H60DF238600Tray
20h
Component Stockers USASTGF30H60DF349
18h
Win SourceWS-STGF30H60DF25.00090
5h

Schede tecniche e documenti

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IHS

Datasheet24 pagine13 anni fa

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STMicroelectronicsSTGF30H60DF
STMicroelectronicsSTGF30M65DF2
Price @ 1000
$ 3.44
$ 1.039
Stock
108,724
167,431
Authorized Distributors
2
6
Mount
Through Hole
-
Case/Package
TO-220-3
-
Collector Emitter Breakdown Voltage
600 V
-
Max Collector Current
60 A
60 A
Power Dissipation
37 W
-
Collector Emitter Saturation Voltage
2.4 V
2 V
Reverse Recovery Time
110 ns
-

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-10-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-29
LTD Date2018-12-29

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Descrizioni

Descrizioni di STMicroelectronics STGF30H60DF fornite dai suoi distributori.

Trans IGBT Chip N-CH 600V 34A 31000mW 3-Pin(3+Tab) TO-220FP Tube
Verical
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IHS
600 V, 30 A high speed trench gate field-stop IGBT
STMicroelectronics
IGBT, SINGLE, 600V, 60A, TO-220FP-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 37W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pi
Farnell

Immagini

Farnell
Lanka Micro
LZChips

Alias del produttore

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