Infineon IRGB4062DPBF

Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 48A 250W TO220AB
$ 10.01
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRGB4062DPBF.

Newark

Datasheet13 pagine12 anni fa
Datasheet13 pagine12 anni fa
Datasheet12 pagine17 anni fa
Datasheet12 pagine17 anni fa

IHS

iiiC

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-24
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2022-01-15
LTD Date2022-07-15

Parti correlate

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H Series 600 V 40 A Flange Mount Trench Gate Field-Stop IGBT - TO-220FP
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InfineonIRGB4630DPBF
600 V, 30 A IGBT with anti-parallel diode in TO-220AB package, TO220COPAK-3, RoHS
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Trans IGBT Chip N-CH 600V 34A 31000mW 3-Pin(3+Tab) TO-220FP Tube
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onsemiHGTP12N60A4
600V, SMPS Series N-Channel IGBTs | IGBT 600V 54A 167W TO220AB
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onsemiSGP40N60UFTU
Trans IGBT Chip N-CH 600V 40A 3-Pin (3+Tab) TO-220 Rail
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Descrizioni

Descrizioni di Infineon IRGB4062DPBF fornite dai suoi distributori.

Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 48A 250W TO220AB
Win Source
600 V, 24 A IGBT with anti-parallel diode in TO-220AB package, TO220COPAK-3, RoHS
Infineon SCT
Target Applications: Air Conditioner; Fan; PFC; Pump; Solar; UPS; Washing Machine; Welding
Infineon
IRGB4062DPbF Series 600 V 24 A N-Channel Bipolar Transistor IGBT - TO-220AB
Future Electronics
600V UltraFast Copack Trench IGBT in a TO-220AB package
International Rectifier
Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IHS
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W
Distrelec
Dc Collector Current:48A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:250W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Msl:- Rohs Compliant: Yes |Infineon IRGB4062DPBF.
Newark
IGBT, COPAK, TO-220; Transistor Type:IGBT; DC Collector Current:48A; Collector Emitter Voltage Vces:1.65V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:48A; Package / Case:TO-220; Power Dissipation Max:250W; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulsed Current Icm:96A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
element14 APAC

Immagini

Infineon
Augswan
TME
DKO Electronshik
Newark
Conrad
UTSource
Distrelec
International Rectifier
Rochester Electronics

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFIRGB4062DPBF
  • IRGB4062D
  • IRGB4062DPBF.
  • SP001544880