STMicroelectronics STD5NM60T4
$ 1.07
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Cronologia dell'inventario
Tendenza a 3 mesi: -44.28%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 3 months ago)
Parti correlate
STMicroelectronicsSTD7N52DK3
N-channel 525 V, 0.95 Ohm typ., 6 A SuperFREDmesh(TM) 3 Power MOSFET in DPAK package
STMicroelectronicsSTD10NM60ND
N-channel 600 V, 0.57 Ohm, 8 A, DPAK FDmesh(TM) II Power MOSFET
Descrizioni
Descrizioni di STMicroelectronics STD5NM60T4 fornite dai suoi distributori.
N-Channel 600V - 0.9Ohm - 8A MDmesh(TM) POWER MOSFET
Power MOSFET, N Channel, 650 V, 5 A, 1 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 5A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:650V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:5A; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:96W; Power Dissipation Pd:96W; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Cronologia dell'inventario
Tendenza a 3 mesi: -44.28%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)5 A
Current Rating5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance400 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation96 W
Rds On Max1 Ω
Resistance1 Ω
Rise Time10 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time23 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)600 V
Dimensions
Height2.4 mm
Length6.6 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant