STMicroelectronics MJD122T4

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
$ 0.344
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Arrow ElectronicsMJD122T41.197.5002500
Verical
2
MJD122T425002500
TME
2
MJD122T428181
6h
DigiKey
3
497-2469-1-ND33.2771Cut Tape
Newark
2
MJD122T402500Tape & Reel

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics MJD122T4.

STMicroelectronics

Datasheet12 pagine20 anni fa

TME

element14 APAC

Nu Horizons

RS (Formerly Allied Electronics)

Cronologia dell'inventario

Trend di 3 mesi:
-18.83%
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Parti alternative

Questo componente
Parti alternative
STMicroelectronicsMJD122T4
onsemiMJD122T4G
onsemiMJD122T4G
Price @ 1000
$ 0.344
$ 0.415
$ 0.415
Stock
5,202,045
3,592,862
3,592,862
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
TO-252
DPAK
DPAK
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
100 V
Max Collector Current
8 A
8 A
8 A
Transition Frequency
-
4 MHz
4 MHz
Collector Emitter Saturation Voltage
4 V
2 V
2 V
hFE Min
100
100
100
Power Dissipation
20 W
20 W
20 W

Supply Chain

Lifecycle StatusProduction (Last Updated: 4 months ago)

Parti correlate

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Bipolar (BJT) Single Transistor, NPN, 150 V, 1 A, 3.8 W, TO-252 (DPAK), Surface Mount
Dettagli
Diodes Inc.MJD32CQ-13
100V 15W 10@3A,4V 3A PNP TO-252 Bipolar Transistors - BJT ROHS
Dettagli

Descrizioni

Descrizioni di STMicroelectronics MJD122T4 fornite dai suoi distributori.

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
ComSIT Distribution GmbH
TRANSISTOR, DARLINGTON, NPN, AMPLIFIER, POWER, VO 100V, VI 5V, IO 8A, PD 20W, TO-252
RS (Formerly Allied Electronics)
Trans Darlington NPN 100V 8A 20000mW 3-Pin(2+Tab) DPAK T/R
Verical
Darlington Transistors, NPN, 100 V, 8 A, 20 W, 1000 hFE, 3 Pins, TO-252 (DPAK)
Avnet
TRANSISTOR, BJT, NPN, 100V, 8A, TO-252-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 5A; DC Current Gain hFE: 1000hFE; Trans
Farnell
Darlington Transistor, Npn, 100V, To-252; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V Rohs Compliant: Yes |Stmicroelectronics MJD122T4
Newark
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5
Distrelec

Immagini

Distrelec
element14
RS (Formerly Allied Electronics)
Augswan
Farnell
RS
Conrad
Farnell
TME
Distrelec
LZChips
DKO Electronshik

Alias del produttore

STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • MJD 122T4
  • MJD122-T4