onsemi MJD122T4G
$ 0.415
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Cronologia dell'inventario
Tendenza a 3 mesi: +24.66%
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Questo componente
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Price @ 1000
$ 0.415
$ 0.51
$ 0.51
Stock
3,538,748
419,166
419,166
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
DPAK
DPAK
DPAK
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
100 V
Max Collector Current
8 A
8 A
8 A
Transition Frequency
4 MHz
4 MHz
4 MHz
Collector Emitter Saturation Voltage
2 V
4 V
4 V
hFE Min
100
100
100
Power Dissipation
20 W
1.75 W
1.75 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1991-06-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi MJD122T4G fornite dai suoi distributori.
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
8.0 A, 100 V NPN Darlington Bipolar Power Transistor
Bipolar Transistors (BJT); MJD122T4G; ON SEMICONDUCTOR; NPN; 3; 100 V; 8 A
MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3
ON SEMI MJD122T4G NPN DARLINGTON TRANSISTOR, 8 A 100 V HFE:100, 3-PIN DPAK
Trans Darlington NPN 100 Volt 8A 3-Pin (2+Tab) DPAK Tape and Reel
DARLINGTON TRANSISTOR, NPN, 100V, D-PAK, FULL REEL
DARLINGTON TRANSISTOR, NPN, 100V, D-PAK, FULL REEL; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V RoHS Compliant: Yes
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 1000 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 4 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5 / Reflow Temperature Max. °C = 260
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +24.66%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
Number of Pins3
Number of Terminals2
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current8 A
Current Rating8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min100
Max Breakdown Voltage100 V
Max Collector Current8 A
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation20 W
Schedule B8541290080
Transition Frequency4 MHz
Voltage Rating (DC)100 V
Dimensions
Height2.38 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità