onsemi RFD3055LE

N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ
EOL
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
FarnellRFD3055LE01
1d
Component Stockers USARFD3055LE4357
17h
Win SourceWS-RFD3055LE10050
4h
Worldway ElectronicsRFD3055LE24.1617Tube
3h
Fmall Co., LimitedRFD3055LE45.150
>1wk

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi RFD3055LE.

Upverter

Technical Drawing1 pagina6 anni fa

Farnell

element14 APAC

Fairchild Semiconductor

onsemi

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Parti alternative

Questo componente
Parti alternative
onsemiRFD3055LE
onsemiRFD3055
onsemiRFD3055
Price @ 1000
$ 0.186
$ 0.186
Stock
176,601
102,463
102,463
Authorized Distributors
1
1
1
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-251-3
TO-251-3
TO-251-3
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
11 A
12 A
12 A
Threshold Voltage
3 V
-
-
Rds On Max
107 mΩ
150 mΩ
150 mΩ
Gate to Source Voltage (Vgs)
16 V
20 V
20 V
Power Dissipation
38 W
53 W
53 W
Input Capacitance
350 pF
300 pF
300 pF

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-03-01
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, IPAK
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Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, IPAK
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MOSFET, Power; P-Channel; 20 Volts (Max.); -11 A (Max.); 38 W; 13 ns (Typ.)
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Descrizioni

Descrizioni di onsemi RFD3055LE fornite dai suoi distributori.

N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ
onsemi
N-Channel 60 V 0.107 Ohm Through Hole Logic Level Power Mosfet - TO-251AA
Future Electronics
Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
IHS
MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 38 W
Distrelec
These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158.
Fairchild Semiconductor

Immagini

Distrelec
LZChips
TME
Distrelec
Micros
Rochester Electronics
iiiC
Jameco
Future Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • RFD 3055LE
  • RFD3055LE .
  • RFD3055LE.