onsemi FQU13N06LTU-WS
$ 0.491
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: -0.93%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-07-09
Lifecycle StatusEOL (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Parti correlate
STMicroelectronicsSTD12NF06L-1
N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package
onsemiHUF76407D3
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 60V 12A IPAK
Descrizioni
Descrizioni di onsemi FQU13N06LTU-WS fornite dai suoi distributori.
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, IPAK
Trans MOSFET N-CH 60V 11A 3-Pin(3+Tab) IPAK Rail
Qf 60V 115Mohm L Ipak/Tube Rohs Compliant: Yes |Onsemi FQU13N06LTU-WS
Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
2.5W(Ta),28W(Tc) 20V 2.5V@ 250¦ÌA 6.4nC@ 5 V 1N 60V 115m¦¸@ 5.5A,10V 11A 350pF@25V TO-251 6.8mm*2.5mm*6.3mm
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.93%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight343.08 mg
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance145 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation28 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max115 mΩ
Rise Time90 ns
Schedule B8541290080
Turn-Off Delay Time20 ns
Turn-On Delay Time8 ns
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità