onsemi NTS4001NT1G
$ 0.107
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | NTS4001NT1G | 1.011.000 | 8334 | 3d | ||||||||
| Future Electronics | NTS4001NT1G | 72.000 | 3K | Tape & Reel | ||||||||
| Newark | NTS4001NT1G | 16.991 | 1 | Cut Tape | ||||||||
| Verical | NTS4001NT1G | 30.000 | 3K | |||||||||
| Arrow Electronics | NTS4001NT1G | 3181 | 1 |
Cronologia dell'inventario
Tendenza a 3 mesi: +29.68%
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Price @ 1000
$ 0.107
$ 0.114
Stock
7,772,194
922,948
Authorized Distributors
6
6
Mount
-
-
Case/Package
SC
SOT-323-3
Drain to Source Voltage (Vdss)
30 V
-
Continuous Drain Current (ID)
270 mA
270 mA
Threshold Voltage
1.2 V
-
Rds On Max
1.5 Ω
1.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
330 mW
330 mW
Input Capacitance
33 pF
33 pF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-08-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
NXP SemiconductorsNX3008NBKT,115
MOSFET Transistor, N Channel, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
onsemiNTA4001NT1
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 238mA Tj 238mA 300mW 15ns
Descrizioni
Descrizioni di onsemi NTS4001NT1G fornite dai suoi distributori.
NTS4001N: Small Signal MOSFET 30V 270mA 1.5 Ohm Single N-Channel SC-70
NTS4001NT1G N-CHANNEL MOSFET TRANSISTOR, 0.27 A, 30 V, 3-PIN SC-70
N-Channel 30 V 1 Ohm 330 mW Surface Mount Small Signal MOSFET - SOT-323
Trans MOSFET N-CH 30V 0.27A 3-Pin SC-70 T/R / MOSFET N-CH 30V 270MA SOT-323
NFET SC70 30V 270MA 1.5OH; Transistor Polarity: N Channel; Continuous Drain Current Id: 270mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 4V; Threshold Voltage Vgs: 1.2V; Power Dissip
330mW(Ta) 20V 1.5V@ 100¦ÌA 1.3nC@ 5 V 1N 30V 1.5¦¸@ 10mA,4V 270mA 33pF@5V 30000,SOD-123,SOT-23,SOT-323,SOT-323-3,XDFN-4 2.1mm*1.24mm*900¦Ìm
N Channel Mosfet, 30V, 270Ma, Sc-70; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:270Ma; Tensión Drenaje-Fuente Vds:30V; Resistencia De Activación Rds(On):1Ohm; Tensión Vgs De Medición Rds(On):4V |Onsemi NTS4001NT1G
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 270 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = 20 / Fall Time ns = 82 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 94 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-323 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 300
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +29.68%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSC
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)270 mA
Current Rating270 mA
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance33 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation330 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation330 mW
Rds On Max1.5 Ω
Resistance1 Ω
Rise Time23 ns
Schedule B8541210080
Threshold Voltage1.2 V
Turn-Off Delay Time94 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)30 V
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità