onsemi FDY100PZ
EOL
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Supply Chain
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-24
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2023-09-30
LTD Date2024-03-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Descrizioni
Descrizioni di onsemi FDY100PZ fornite dai suoi distributori.
P-Channel (- 2.5V) Specified PowerTrench® MOSFET -20V, -0.35A, 1.2Ω
FDY1002PZ Series 20 V 0.83 A 0.5 Ohm Dual P-Ch PowerTrench® MOSFET -SC-89-6
Trans MOSFET P-CH 20V 0.35A 3-Pin SC-89 T/R
MOSFETs -20VSgl P-Ch -2.5V Spec PwrTrch MOSFET
Small Signal Field-Effect Transistor, 0.35A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
This Single P-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(ON) @ VGS = -2.5v.
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFET, P, SMD, SC89; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:0.35A; Resistance, Rds On:1.2ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-1V; Case Style:SC-89; ;RoHS Compliant: Yes
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageSC
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)350 mA
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance100 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation446 mW
Rds On Max1.2 Ω
Resistance1.2 Ω
Rise Time13 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-1 V
Turn-Off Delay Time8 ns
Turn-On Delay Time6 ns
Dimensions
Height780 µm
Length1.7 mm
Width980 µm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità