onsemi NTJD4105CT1G
$ 0.125
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | NTJD4105CT1G | 249.000 | 3K | Tape & Reel | ||||||||
| Avnet | NTJD4105CT1G | 9000 | 3K | 4d | ||||||||
| Newark | NTJD4105CT1G | 105 | 5 | Cut Tape | ||||||||
| Verical | NTJD4105CT1G | 12.000 | 4886 | |||||||||
| Arrow Electronics | NTJD4105CT1G | 268 | 1 |
Cronologia dell'inventario
Tendenza a 3 mesi: +158%
Modelli CAD
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1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi NTJD4105CT1G.
Modelli CAD
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|---|---|---|---|
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Questo componente
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Price @ 1000
$ 0.125
$ 0.068
Stock
4,960,580
12,388,105
Authorized Distributors
6
6
Mount
-
-
Case/Package
SOT-363-6
SOT-363-6
Drain to Source Voltage (Vdss)
20 V
-
Continuous Drain Current (ID)
630 mA
630 mA
Threshold Voltage
920 mV
-
Rds On Max
375 mΩ
375 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
-
270 mW
Input Capacitance
46 pF
46 pF
Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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NTJS4405N: Small Signal MOSFET 25V 1.2A 350 mOhm Single N-Channel SC-88/SC70-6/SOT-363
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Mosfet, N-Ch, 20V, 0.95A, Sot-363 Rohs Compliant: Yes |Infineon Technologies BSD235NH6327XTSA1
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Mosfet, N-Ch, 20V, 0.88A, Sot-363 Rohs Compliant: Yes |Infineon Technologies BSD840NH6327XTSA1
Descrizioni
Descrizioni di onsemi NTJD4105CT1G fornite dai suoi distributori.
NTJD4105C: Small Signal MOSFET 20V 775mA 220 mOhm Dual Complementary SC-88/SC70-6/SOT-363
MOSFET N/P-CH 20V/8V SOT-363 / Trans MOSFET N/P-CH 20V/8V 0.91A/1.1A 6-Pin SC-88 T/R
MOSFETs- Power and Small Signal 20V/-8V 0.63A/-.775A Complementary
COMPLEMENTARY, +0.63 A/-0.775 A, SC-88 SMALL SIGNAL MOSFET Small Signal Field-Effect Transistor, 0.63A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
550mW ¡À12 @ N Channel,¡À8 @ P Channel 1.5V@ 250¦ÌA 3nC@ 4.5V 2N+2P 20V,8V 375m¦¸@ 630mA,4.5V 630mA,775mA 46pF@20V SC-88,SOP-8,SOT-363,TO-252 2mm*1.25mm*1.1mm
MOSFET, N & P CH, 20V, 0.63A, SOT-363-6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 630mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Volta
Mosfet, N/P Channel, 20V, 0.63A, Sot-363-6; Channel Type:Complementary N And P Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:8V; Continuous Drain Current Id N Channel:630Ma; No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi NTJD4105CT1G.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +158%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-363-6
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)630 mA
Current Rating630 mA
Drain to Source Breakdown Voltage-8 V
Drain to Source Resistance375 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time36 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance46 pF
Max Operating Temperature150 °C
Max Power Dissipation550 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs920 mV
Number of Elements2
PackagingTape and Reel
Rds On Max375 mΩ
Resistance220 mΩ
Rise Time23 ns
Schedule B8541210080
Threshold Voltage920 mV
Turn-Off Delay Time50 ns
Turn-On Delay Time83 ns
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi NTJD4105CT1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità