onsemi NTD4302G

Tube Surface Mount N-Channel Single Mosfet Transistor 8.4A Ta 68A Tc 68A 75W 40ns
$ 0.506
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
Verical
2
NTD4302G32.125616
Rochester ElectronicsNTD4302G35.125
10h
element14 APACNTD4302G01
23h
FarnellNTD4302G01
10h
Microchip USANTD4302G25423KTray
4d

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi NTD4302G.

IHS

Datasheet8 pagine7 anni fa

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Parti alternative

Questo componente
Parti alternative
onsemiNTD4302G
onsemiNTD4302T4G
Price @ 1000
$ 0.506
$ 0.717
Stock
354,389
1,759,254
Authorized Distributors
4
6
Mount
-
-
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
8.4 A
8.4 A
Threshold Voltage
1.9 V
1.9 V
Rds On Max
10 mΩ
10 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
75 W
75 W
Input Capacitance
2.4 nF
2.4 nF

Supply Chain

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-10-17
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2010-07-21
LTD Date2011-01-21
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)

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Single N-Channel Power MOSFET 30V, 18.5A, 10mΩ
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STMicroelectronicsSTD75N3LLH6
N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
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PowerTrench® MOSFET, N-Channel, 30V, 58A, 9mΩ
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STD86N3LH5 Series 30 V 0.005 Ohm 80 A N-Channel STripFET H5 Power Mosfet-DPAK-3
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STMicroelectronicsSTD70NS04ZL
Power MOSFET, N Channel, 33 V, 70 A, 10.5 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount
Dettagli

Descrizioni

Descrizioni di onsemi NTD4302G fornite dai suoi distributori.

Tube Surface Mount N-Channel Single Mosfet Transistor 8.4A Ta 68A Tc 68A 75W 40ns
AAA CHIPS
Single N-Channel Power MOSFET 30V, 18.5A, 10mΩ
onsemi
Trans MOSFET N-CH 30V 11.3A 3-Pin(2+Tab) DPAK Tube
Verical
XTR,PWR,MFT,NTD4302,DPK 30V,68A,RDS(on)=0.010-OHM@10V,N-CHANNEL,D-PAK
Sensible Micro
MOSFETs- Power and Small Signal 30V 68A N-Channel
Mouser
Power Field-Effect Transistor, 8.4A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:68A; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Newark

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