onsemi FDD8880
$ 0.376
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -2.48%
Modelli CAD
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1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDD8880.
Modelli CAD
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Questo componente
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Price @ 1000
$ 0.376
$ 0.481
$ 0.481
Stock
1,513,074
258,477
258,477
Authorized Distributors
6
2
2
Mount
Surface Mount
-
-
Case/Package
DPAK
TO-252
TO-252
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
35 A
35 A
35 A
Threshold Voltage
2.5 V
-
-
Rds On Max
9 mΩ
-
-
Gate to Source Voltage (Vgs)
20 V
-
-
Power Dissipation
55 W
-
-
Input Capacitance
1.26 nF
-
-
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-05-13
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2026-01-01
LTD Date2026-07-01
Manufacturer Lifecycle StatusLIFETIME (Last Updated: 3 days ago)
Parti correlate
STMicroelectronicsSTD70NS04ZL
Power MOSFET, N Channel, 33 V, 70 A, 10.5 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount
Descrizioni
Descrizioni di onsemi FDD8880 fornite dai suoi distributori.
PowerTrench® MOSFET, N-Channel, 30V, 58A, 9mΩ
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,13A I(D),TO-252AA
N-Channel 30 V 58 A 9 mOhm PowerTrench Mosfet TO-252AA
MOSFET N-CH 30V 58A DPAK / Trans MOSFET N-CH 30V 13A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 30V, 58A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.007ohm; Available until stocks are exhausted Alternative available
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -2.48%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)35 A
Current Rating58 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.26 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation55 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation55 W
Rds On Max9 mΩ
Resistance9 MΩ
Rise Time91 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time38 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)30 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDD8880.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità