onsemi NTB5605PG

Tube Surface Mount P-Channel Single Mosfet Transistor 18.5A Ta 18.5A 88W 75ns
$ 0.504
Obsolete
Pagina del produttoreScheda dati

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DistributorSKUMinPkg
Rochester ElectronicsNTB5605PG10
5h
Win SourceWS-NTB5605PG2070
6h
Worldway ElectronicsNTB5605PG23.6847Tube
4h
AztechNTB5605PG9077
16m
LixincNTB5605PG4356
>1wk

Schede tecniche e documenti

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IHS

Datasheet7 pagine18 anni fa

onsemi

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onsemiNTB5605PG
onsemiNTB5605PT4G
Price @ 1000
$ 0.504
$ 2.029
Stock
44,342
197,417
Authorized Distributors
1
4
Mount
Surface Mount
-
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
18.5 A
18.5 A
Threshold Voltage
-
-1.5 V
Rds On Max
140 mΩ
140 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
88 W
88 W
Input Capacitance
1.19 nF
1.19 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2009-03-31
LTD Date2009-09-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)

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Descrizioni

Descrizioni di onsemi NTB5605PG fornite dai suoi distributori.

Tube Surface Mount P-Channel Single Mosfet Transistor 18.5A Ta 18.5A 88W 75ns
Fly-Wing Technology
Single P-Channel Power MOSFET -60V -18.5A 140 mΩ
onsemi
Trans MOSFET P-CH 60V 18.5A 3-Pin(2+Tab) D2PAK Rail
Avnet
Designed for high speed switching applications in power supplies converters PWM motor controls and other inductive loads this power MOSFET can withstand high energy in the avalanche and commutation modes. The avalanche energy rating is specified to eliminate the guesswork in designs where inductive loads are switched and to offer additional safety margin against unexpected voltage transients. The energy efficient design also offers a drain to source diode with fast recovery time.
North Star Micro

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