MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:30V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Mounting Type:Surface Mount ;RoHS Compliant: Yes

Newark

These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.

Fairchild Semiconductor

Immagini

Newark

iiiC

Rochester Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Cronologia dell'inventario

Tendenza a 3 mesi: +0.00%

Specifiche tecniche

Physical

Case/PackageSOIC

MountSurface Mount

Number of Pins8

Number of Terminals8

Weight230.4 mg

Technical

Continuous Drain Current (ID)6.3 A

Current Rating4.8 A

Drain to Source Breakdown Voltage30 V

Drain to Source Resistance35 mΩ

Drain to Source Voltage (Vdss)30 V

Fall Time19 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance720 pF

Max Operating Temperature150 °C

Max Power Dissipation2.5 W

Min Breakdown Voltage30 V

Min Operating Temperature-55 °C

Number of Elements2

PackagingCut Tape

Power Dissipation2.5 W

Rds On Max35 mΩ

Rise Time20 ns

Turn-Off Delay Time40 ns

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi NDS8858H.

IHS

Datasheet9 pagine28 anni fa

Datasheet0 pagine0 anni fa

Fairchild Semiconductor

iiiC

Newark

Conformità

Classificazione ambientale

Lead FreeLead Free

Radiation HardeningNo

REACH SVHCYes

RoHSCompliant

Dichiarazioni di conformità

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa