onsemi FDS8958A
$ 0.3
EOL
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -1.44%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Modelli CAD
Scarica il simbolo onsemi FDS8958A, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 TraceParts | 3D | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-06-01
Lifecycle StatusEOL (Last Updated: 9 hours ago)
LTB Date2024-06-22
LTD Date2024-12-22
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 9 hours ago)
Descrizioni
Descrizioni di onsemi FDS8958A fornite dai suoi distributori.
MOSFET N/P-CH 30V 7A/5A 8SOIC / Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC T/R
Dual N & P-Channel 30 V 0.028 Ohm Surface Mount PowerTrench Mosfet - SOIC-8
Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, NP, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:7A; Cont Current Id P Channel:5A; Current Id Max:7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance N Channel Max:28mohm; On State Resistance P Channel Max:52mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Pulse Current Idm N Channel 2:20A; Pulse Current Idm P Channel:20A; SMD Marking:FDS8958A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -1.44%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)7 A
Current Rating7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Fall Time9 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance575 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation2 W
Rds On Max28 mΩ
Resistance28 mΩ
Rise Time13 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.9 V
Turn-Off Delay Time14 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità