Dual N Channel Mosfet, 30V, 5.3A, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.3A; On Resistance Rds(On):0.033Ohm; Transistor Mounting:surface Mount; Threshold Voltage Vgs:1.6Vrohs Compliant: Yes

Newark

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Fairchild Semiconductor

Immagini

Newark

Rochester Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

NDS8936.

Cronologia dell'inventario

Tendenza a 3 mesi: +0.00%

Specifiche tecniche

Physical

Case/PackageSOIC

MountSurface Mount

Number of Pins8

Number of Terminals8

Weight230.4 mg

Technical

Continuous Drain Current (ID)5.3 A

Current Rating5.3 A

Drain to Source Breakdown Voltage30 V

Drain to Source Resistance35 mΩ

Drain to Source Voltage (Vdss)30 V

Dual Supply Voltage30 V

Element ConfigurationDual

Fall Time10 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance720 pF

Max Operating Temperature150 °C

Max Power Dissipation2 W

Min Breakdown Voltage30 V

Min Operating Temperature-55 °C

Nominal Vgs1.6 V

Number of Elements2

PackagingCut Tape

Power Dissipation2 W

Rds On Max35 mΩ

Resistance35 mΩ

Rise Time13 ns

Turn-Off Delay Time29 ns

Voltage Rating (DC)30 V

Dimensions

Row Spacing6.3 mm

Width4.05 mm

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi NDS8936.

IHS

Datasheet7 pagine29 anni fa

Datasheet0 pagine0 anni fa

Fairchild Semiconductor

Farnell

Newark

Conformità

Classificazione ambientale

REACH SVHCYes

RoHSCompliant

Dichiarazioni di conformità

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa