onsemi MTB30P06VT4G

Name: onsemi MTB30P06VT4G
Brand: onsemi
SKU: MTB30P06VT4G

Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK

$ 1.245

Obsolete

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Distributor	SKU		Min	Pkg
Verical	MTB30P06VT4G	2750	250					1,245	1,110
Rochester Electronics	MTB30P06VT4G	2750					1,200	0,996	0,888	4h
RS (Formerly Allied Electronics)	MTB30P06VT4G	0	10	Bulk		2,000	1,900	1,720	1,720	20h
Component Stockers USA	MTB30P06VT4G	18.716			1,300	1,270	1,230	1,190	1,190	>1wk
Win Source	WS-MTB30P06VT4G	725	19				2,407	2,086	2,086	5h

Cronologia dell'inventario

Tendenza a 3 mesi: -8.33%

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0 parti disponibili

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi MTB30P06VT4G.

IHS

Datasheet9 pagine14 anni fa

Upverter

onsemi

Newark

DigiKey

Cronologia dell'inventario

Trend di 3 mesi:

-8.33%

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Supply Chain

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-06-01

Lifecycle StatusObsolete (Last Updated: 5 years ago)

LTB Date2015-10-17

LTD Date2016-04-17

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)

Parti correlate

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N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, D2PAK

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InfineonIRF5305STRLPBF

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;D2Pak;PD 110W;VGS +/-20V

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InfineonIRF5305SPBF

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;D2Pak;PD 110W;VGS +/-20V

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InfineonIRF5305STRRPBF

Single P-Channel 55 V 60 mOhm 42 nC HEXFET® Power Mosfet - D2PAK

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STMicroelectronicsSTB45NF06T4

N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package

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Descrizioni

Descrizioni di onsemi MTB30P06VT4G fornite dai suoi distributori.

Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK

onsemi

MTB30P06VT4G P-CHANNEL MOSFET TRANSISTOR, 30 A, 60 V, 3-PIN D2PAK

RS (Formerly Allied Electronics)

Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 30A Tc 30A 3W 52.4ns

Fly-Wing Technology

Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK T/R

Verical

60 VOLTS, 30 AMPS, P-CHANNEL D2PAK POWER MOSFET Power Field-Effect Transistor, 30A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

P CHANNEL MOSFET, -60V, 30A, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.6V

element14 APAC

P Channel Mosfet, -60V, 30A, D2-Pak; Transistor, Polaridad:Canal P; Intensidad Drenador Continua Id:-30A; Tensión Drenaje-Fuente Vds:-60V; Resistencia De Activación Rds(On):67Mohm; Tensión Vgs De Medición Rds(On):-10V |Onsemi MTB30P06VT4G

Newark

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage high speed switching applications in power supplies converters and power motor controls these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

North Star Micro

Immagini

Newark

RS (Formerly Allied Electronics)

element14

Rochester Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Cronologia dell'inventario

Tendenza a 3 mesi: -8.33%

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

0 parti disponibili

Specifiche tecniche

Physical

Case/PackageD2PAK

Contact PlatingTin

Number of Pins3

Number of Terminals2

Technical

Continuous Drain Current (ID)30 A

Current Rating-30 A

Drain to Source Resistance80 mΩ

Drain to Source Voltage (Vdss)60 V

Element ConfigurationSingle

Fall Time52.4 ns

Gate to Source Voltage (Vgs)15 V

Input Capacitance2.19 nF

Max Operating Temperature175 °C

Max Power Dissipation125 W

Min Breakdown Voltage60 V

Min Operating Temperature-55 °C

Nominal Vgs-2.6 V

Number of Elements1

PackagingTape and Reel

Rds On Max80 mΩ

Resistance80 MΩ

Rise Time25.9 ns

Turn-Off Delay Time98 ns

Turn-On Delay Time14.7 ns

Voltage Rating (DC)-60 V

Dimensions

Height4.83 mm

Length10.29 mm

Width9.65 mm

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi MTB30P06VT4G.

IHS

Datasheet9 pagine14 anni fa

Upverter

onsemi

Newark

DigiKey

Conformità

Classificazione ambientale

China RoHSNon-Compliant

Lead FreeLead Free

Radiation HardeningNo

REACH SVHCNo

RoHSCompliant

Dichiarazioni di conformità

Rohs Statement3 pagine5 anni fa

Reach Statement8 pagine11 anni fa

Rohs StatementN/AN/A