onsemi MMBT3906SL
$ 0.038
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | MMBT3906SL | 112.940 | 5h | |||||||||
| Verical | MMBT3906SL | 79.124 | 7895 | |||||||||
| Flip Electronics | MMBT3906SL | 152.000 | 7d | |||||||||
| Avnet | MMBT3906SL | 0 | 25K | 7h | ||||||||
| Win Source | WS-MMBT3906SL | 136.000 | 1500 | 6h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.038
$ 0.032
$ 0.032
Stock
1,312,743
36,808,296
36,808,296
Authorized Distributors
4
6
6
Mount
Surface Mount
-
-
Case/Package
-
SOT-23
SOT-23
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
40 V
-40 V
-40 V
Max Collector Current
200 mA
200 mA
200 mA
Transition Frequency
250 MHz
250 MHz
250 MHz
Collector Emitter Saturation Voltage
-250 mV
400 mV
400 mV
hFE Min
30
30
30
Power Dissipation
227 mW
225 mW
225 mW
Supply Chain
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2008-02-19
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2019-10-31
LTD Date2020-10-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
Parti correlate
Diodes Inc.MMST3906-7-F
Single Bipolar Transistor, PNP, 40 V, 200 mA, 200 mW, SOT-323, 3 Pin, Surface Mount
Diodes Inc.MMDT3946-7-F
Bipolar Transistor Array, Dual, Complementary NPN and PNP, 40 V, 40 V, 200 mA, 200 mA, 200 mW
Diodes Inc.MMDT3906-7-F
MMDT3906 Series Dual PNP 40 V 200 mW Small Signal Transistor SMT - SOT-363
Descrizioni
Descrizioni di onsemi MMBT3906SL fornite dai suoi distributori.
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
200 mA, 40 V PNP Bipolar Junction Transistor. ONSSPCTRNSTVU6M5P;
Trans GP BJT PNP 40V 0.2A 227mW 3-Pin SOT-1123 T/R
TRANSISTOR, PNP, 40V, 200MA, SOT923-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 227mW; DC Collector Current: -200mA; DC Current Gain hFE: 30hFE;
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight22 mg
Technical
Collector Base Voltage (VCBO)-40 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage-250 mV
Collector Emitter Voltage (VCEO)40 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min30
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency250 MHz
Max Operating Temperature150 °C
Max Power Dissipation227 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation227 mW
Schedule B8541210080
Transition Frequency250 MHz
Dimensions
Height380 µm
Length850 µm
Width650 µm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità