onsemi MMBT3906
$ 0.025
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | MMBT3906 | 365.604 | 13h | |||||||||
| Farnell | MMBT3906 | 0 | 5 | Cut Tape | 8h | |||||||
| element14 APAC | MMBT3906 | 0 | 5 | Cut Tape | 2h | |||||||
| Component Stockers USA | MMBT3906 | 343.449 | >1wk | |||||||||
| Win Source | WS-MMBT3906 | 300.000 | 1770 | 14h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Questo componente
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Price @ 1000
$ 0.025
$ 0.04
$ 0.04
Stock
1,179,634
4,882,983
4,882,983
Authorized Distributors
3
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23
SOT-23-3
SOT-23-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-40 V
40 V
40 V
Max Collector Current
200 mA
200 mA
200 mA
Transition Frequency
250 MHz
250 MHz
250 MHz
Collector Emitter Saturation Voltage
400 mV
400 mV
400 mV
hFE Min
30
30
30
Power Dissipation
350 mW
300 mW
300 mW
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1989-01-01
Lifecycle StatusObsolete (Last Updated: 1 day ago)
LTB Date2018-09-30
LTD Date2019-03-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
Parti correlate
onsemiKST3906MTF
KST3906 Series 40 V 200 mA 350 mW PNP Epitaxial Silicon Transistor - SOT-23-3
Diodes Inc.MMBT3906-7-F
Single Bipolar Transistor, PNP, 40 V, 200 mA, 350 mW, SOT-23, 3 Pins, Surface Mount
Diodes Inc.MMBT4403-7-F
Bipolar (BJT) Single Transistor, PNP, -40 V, 300 mW, -600 mA, 100 RoHS Compliant: Yes
Diodes Inc.BC857A-7-F
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Descrizioni
Descrizioni di onsemi MMBT3906 fornite dai suoi distributori.
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
MMBT3906 Series 40 V 0.2 A 350 mW PNP General Purpose Amplifier - SOT-23
Trans GP BJT PNP 40V 0.2A 3-Pin SOT-23 T/R
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
TRANSISTOR, PNP SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transistor Case Style: SOT-23; No. of Pins: 3Pins; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Collector Current Ic
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:300; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-250mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:BT3906; Gain Bandwidth ft Min:250MHz; Gain Bandwidth ft Typ:250MHz; Hfe Min:100; No. of Transistors:1; Noise Factor Max:4dB; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:2A; Termination Type:SMD; Voltage Vcbo:40V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)-40 V
Collector Emitter Breakdown Voltage-40 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating-200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min30
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency250 MHz
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityPNP
Power Dissipation350 mW
Transition Frequency250 MHz
Voltage Rating (DC)-40 V
Dimensions
Height1.2 mm
Length6.35 mm
Width6.35 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità