onsemi MMBT2222AK

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Obsolete
Scheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
AvnetMMBT2222AK06K
3d
Microchip USAMMBT2222AK226150Tray
5d
Win SourceWS-MMBT2222AK16.20070
17h
Worldway ElectronicsMMBT2222AK10.0937Tape & Reel
15h
AztechMMBT2222AK18.364
13h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi MMBT2222AK.

IHS

Datasheet4 pagine21 anni fa

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Parti alternative

Questo componente
Parti alternative
onsemiMMBT2222AK
onsemiMMBT2222ALT1G
onsemiMMBT2222ALT1G
Price @ 1000
$ 0.036
$ 0.036
Stock
93,643
118,018,486
118,018,486
Authorized Distributors
1
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23
SOT-23
SOT-23
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
40 V
Max Collector Current
600 mA
600 mA
600 mA
Transition Frequency
300 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
-
300 mV
300 mV
hFE Min
40
75
75
Power Dissipation
350 mW
225 mW
225 mW

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-03-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-03-15
LTD Date2010-09-15

Parti correlate

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Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
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onsemiKST2222AMTF
KST2222A Series 40 V 600 mA NPN Epitaxial Silicon Transistor - SOT-23-3
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Diodes Inc.MMBT4401-7-F
Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 310 mW, SOT-23, Surface Mount
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Diodes Inc.MMBT4401-13-F
Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 350 mW, SOT-23, Surface Mount
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ROHMSST2222AT116
Bipolar (BJT) Single Transistor, NPN, 40 V, 150 mA, 200 mW, SOT-23, Surface Mount
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Descrizioni

Descrizioni di onsemi MMBT2222AK fornite dai suoi distributori.

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
IHS
TRANS GP BJT NPN 40V 0.6A 3PIN SOT-23
Avnet
SOT-23 ,NPN EPITAXIAL SILICON TRANSISTOR
Master Electronics
BIPOLAR TRANSISTOR, NPN, 40V; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:40V; Transition Frequency Typ, ft:300MHz; Power Dissipation, Pd:350mW; DC Collector Current:600mA; DC Current Gain Max (hfe):100 ;RoHS Compliant: Yes
Newark
TRANSISTOR NPN 0.6A SOT-23; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:40V; Max Current Ic Continuous a:500mA; Max Voltage Vce Sat:1V; Power Dissipation:350mW; Min Hfe:35; Typ Gain Bandwidth ft:300MHz; Case Style:SOT-23; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C
Farnell

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  • ON Semiconductor
  • ONS
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  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd