onsemi MJD45H11G

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
$ 0.449
Production
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Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi MJD45H11G.

IHS

Datasheet11 pagine4 anni fa

Newark

onsemi

TME

JRH Electronics

Cronologia dell'inventario

Trend di 3 mesi:
+97.75%

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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 0.449
$ 0.367
$ 0.367
Stock
967,075
6,624,586
6,624,586
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
DPAK
TO-252-3
TO-252-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-
80 V
80 V
Max Collector Current
8 A
8 A
8 A
Transition Frequency
90 MHz
90 MHz
90 MHz
Collector Emitter Saturation Voltage
1 V
1 V
1 V
hFE Min
40
40
40
Power Dissipation
1.75 W
1.75 W
1.75 W

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

Bipolar (BJT) Single Transistor, PNP, 80 V, 8 A, 20 W, TO-252 (DPAK), Surface Mount
Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 40 @ 4A 1V 1muA 20W 90MHz
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Descrizioni

Descrizioni di onsemi MJD45H11G fornite dai suoi distributori.

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Bipolar Transistors (BJT); MJD45H11G; ON SEMICONDUCTOR; PNP; 3; 80 V; 8 A
8 A, 80 V PNP Power Bipolar Junction Transistor
80V 1.75W 40@4A,1V 8A PNP TO-252 Bipolar Transistors - BJT ROHS
MJD Series 80 V 8 A PNP Complementary Power Transistor - TO-252-3
Bipolar Transistors - BJT 8A 80V 20W PNP
Trans GP BJT PNP 80V 8A 1750mW 3-Pin(2+Tab) DPAK Tube
TRANSISTOR, PNP, D-PAK; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 90MHz; Power Dissipation Pd: 20W; DC Collector Current: 8A; DC Current Gain hFE: 60hFE; Transistor Case Style:
Rf Transistor, Pnp, -80V, 90Mhz, D-Pak; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD45H11G.
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 60 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tube / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.5 / Reflow Temperature Max. °C = 260

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • MJD45H11-G
  • MJD45H11G.