onsemi MBT3904DW1T3G

on Semi MBT3904DW1T3G Dual NPN Bipolar Transistor, 0.2 A, 40 V, 6-PIN SOT-363
$ 0.055
Production
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Schede tecniche e documenti

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Master Electronics

Datasheet8 pagine10 anni fa

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onsemi

Arrow Electronics

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Parti alternative

Price @ 1000
$ 0.055
$ 0.031
$ 0.031
Stock
4,899,268
13,763,733
13,763,733
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-363-6
SOT-363-6
SOT-363-6
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
40 V
Max Collector Current
200 mA
200 mA
200 mA
Transition Frequency
300 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
300 mV
300 mV
300 mV
hFE Min
30
30
30
Power Dissipation
150 mW
150 mW
150 mW

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-08-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

Bipolar Transistor Array, General Purpose, Dual NPN, 40 V, 600 mA, 150 mW
Dual Bias Resistor BJT NPN/PNP Transistor 50 Volt 100mA 6-Pin SOT-363
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 10 kohm

Descrizioni

Descrizioni di onsemi MBT3904DW1T3G fornite dai suoi distributori.

ON SEMI MBT3904DW1T3G DUAL NPN BIPOLAR TRANSISTOR, 0.2 A, 40 V, 6-PIN SOT-363
ON SEMICONDUCTOR - MBT3904DW1T3G - BIPOLAR TRANSISTOR, NPN, 40V, FULL REEL
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon
Bipolar Transistors - BJT 200mA 60V Dual NPN
Transistor Array, Dual Npn, 40V, Sot-363; Transistor Polarity:Dual Npn; Collector Emitter Voltage Max Npn:40V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current Npn:200Ma; Continuous Collector Current Pnp:- Rohs Compliant: Yes |Onsemi MBT3904DW1T3G

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