onsemi MBT3904DW1T1G

Bipolar Transistors (BJT); MBT3904DW1T1G; ON SEMICONDUCTOR; NPN; 6; 40 V; 200 mA
$ 0.038
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Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi MBT3904DW1T1G.

Upverter

Datasheet8 pagine13 anni fa

IHS

Newark

onsemi

JRH Electronics

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Parti alternative

Price @ 1000
$ 0.038
$ 0.051
$ 0.051
Stock
13,582,809
8,972,253
8,972,253
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-363-6
SOT-363-6
SOT-363-6
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
40 V
Max Collector Current
200 mA
200 mA
200 mA
Transition Frequency
300 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
300 mV
300 mV
300 mV
hFE Min
30
30
30
Power Dissipation
150 mW
150 mW
150 mW

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

Bipolar Transistor Array, General Purpose, Dual NPN, 40 V, 600 mA, 150 mW
Dual Bias Resistor BJT NPN/PNP Transistor 50 Volt 100mA 6-Pin SOT-363
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 10 kohm

Descrizioni

Descrizioni di onsemi MBT3904DW1T1G fornite dai suoi distributori.

Bipolar Transistors (BJT); MBT3904DW1T1G; ON SEMICONDUCTOR; NPN; 6; 40 V; 200 mA
TRANSISTOR, BIPOLAR, SI, NPN, GENERAL PURPOSE, VCEO 40VDC, IC 200MA, PD 150W, SOT-363
Bipolar Transistor Array, General Purpose, Dual NPN, 40 V, 200 mA, 150 mW
General Purpose Transistors Dual NPN Ic=200mA Vceo=40V hfe=100~300 P=150mW SOT363
TRANSISTOR, BIPOLAR, NPN, DUAL 40V, SOT363, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max NPN:40V; Collector Emitter Voltage Max PNP:-; Continuous Collector Current NPN:200mA; Power Dissipation NPN:150mW RoHS Compliant: Yes
The MBT3904DW1T1 MBT3904DW2T1 and MBT3906DW1T1 devices are spin-offs of our popular SOT-23/SOT-323 three-leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package these devices are ideal for low-power surface mount applications where board space is at a premium.
Transistor Polarity = NPN / Configuration = Dual / Continuous Collector Current (Ic) mA = 200 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 30 / Collector-Base Voltage (Vcbo) V = 60 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 950 / Reflow Temperature Max. °C = 260

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • MBT3904DW1T1G.