onsemi HGTP5N120BND
$ 1.406
EOL
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | HGTP5N120BND | 750 | 200 | |||||||||
| Avnet | HGTP5N120BND | 2 | 500 | 14h | ||||||||
| Rochester Electronics | HGTP5N120BND | 34.350 | 12h | |||||||||
| Flip Electronics | HGTP5N120BND | 2 | 6d | |||||||||
| Microchip USA | HGTP5N120BND | 162 | 150 | Tube | 4h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2003-04-16
LTD Date2003-12-31
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
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600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package, TO220COPAK-3, RoHS
Descrizioni
Descrizioni di onsemi HGTP5N120BND fornite dai suoi distributori.
Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-220AB Rail
HGTP5N120BND Series 1200 V 21 A Flange Mount N-Channel IGBT - TO-220AB
167W 21A 1.2kV NPT (non-penetrating type) TO-220AB-3 IGBT Transistors / Modules ROHS
Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
RAIL / 1200V,21A,NPT SERIES NCH IGBT W/ ANTI-PARALLEL HYPERFAST
HGTP5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and motor control.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.45 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current21 A
Current Rating21 A
Element ConfigurationSingle
Fall Time200 ns
Max Collector Current21 A
Max Operating Temperature150 °C
Max Power Dissipation167 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation167 W
Reverse Recovery Time30 ns
Rise Time20 ns
Voltage Rating (DC)1.2 kV
Dimensions
Height9.4 mm
Length10.67 mm
Width4.83 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità