Infineon IRG4BC40FPBF
$ 7.81
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRG4BC40FPBF.
Modelli CAD
Scarica il simbolo Infineon IRG4BC40FPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta |
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-04-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-06-30
LTD Date2020-12-31
Parti correlate
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600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package, TO220-3, RoHS
InfineonIRG4BC40UPBF
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
onsemiHGTP7N60A4
Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB
Descrizioni
Descrizioni di Infineon IRG4BC40FPBF fornite dai suoi distributori.
Transistor IGBT Chip Negative Channel 600 Volt 49A 3-Pin(3+Tab) TO-220AB
IRG4BC40FPbF Series 600 V 27 A N-Channel Fast Speed IGBT - TO-220AB
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
Infineon SCT
FAST SPEED INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 170 ns Power dissipation: 160 W
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:49A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:49A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:200A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.7 V
Collector Emitter Voltage (VCEO)600 V
Current Rating49 A
Element ConfigurationDual
Max Collector Current49 A
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity1000
PackagingBulk
Power Dissipation160 W
Rise Time18 ns
TerminationThrough Hole
Turn-Off Delay Time240 ns
Turn-On Delay Time26 ns
Voltage Rating (DC)600 V
Dimensions
Height8.77 mm
Length10.54 mm
Width4.69 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRG4BC40FPBF.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità